By Prof. Anthony C. Jones, Prof. Paul O'Brien(auth.)
Chemical progress tools of digital fabrics are the keystone of microelectronic equipment processing. This ebook discusses the functions of metalorganic chemistry for the vapor section deposition of compound semiconductors. Vapor part tools used for semiconductor deposition and the fabrics homes that make the organometallic precursors worthwhile within the electronics are mentioned for a number of materials.
subject matters included:
* suggestions for compound semiconductor growth
* metalorganic precursors for III-V MOVPE
* metalorganic precursors for II-VI MOVPE
* single-source precursors
* chemical beam epitaxy
* atomic layer epitaxy
numerous important appendixes and a significantly chosen, updated checklist of references around off this useful instruction manual for fabrics scientists, solid-state and organometallic chemists, and engineers.
Chapter 1 uncomplicated strategies (pages 1–42):
Chapter 2 Precursor Chemistry (pages 43–98):
Chapter three MOVPE of III–V Compounds (pages 99–186):
Chapter four MOVPE of II–VI Compounds (pages 187–228):
Chapter five Metalorganic Precursors for Chemical Beam Epitaxy (pages 229–272):
Chapter 6 Atomic Layer Epitaxy (pages 273–286):
Chapter 7 the only resource method of the Deposition of Compound Semiconducting fabrics via MOCVD and comparable equipment (pages 288–312):
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Extra info for CVD of Compound Semiconductors: Precursor Synthesis, Development and Applications
It is assumed that the carrier gas is fully saturated and that the precursor exerts its equilibrium vapor pressure. Thus, the rate of precursor transport can be accurately controlled by a mass flow controller (MFC) upstream from the bubbler. 1 OC, and temperatures are typically in the range -20 'C to + 40 "C for the most commonly used metalorganic precursors. The Group V sources are generally ASH, and PH, which are contained in high pressure gas cylinders. Most modern MOVPE reactors operate on the principle of 'vent-run' in which a vent line allows the flow of reactants to be stabilized before entering the reactor tube.
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Ozeki, Mat. Sci. Rep. 1992, 8, 102.  M. Ozeki K. Mochizuki N. Ohtsuka, K. Kodama, J. Vuc. Sci. Technol. 1987, B5, 1184.  J. Nishizawa, H. Abe, T. Kurakayashi, J. Electrochem. SOC. 1985, 132, 1197.  J. R. Creighton, B. A. Bansenauer, Thin Solid Films 1993, 225, 17. CVD of Compound Semiconductors Edited by Anthony C. 1 Introduction The electrical and optical properties of semiconductor layers grown by MOVPE, CBE or ALE are critically dependent on the nature and purity of the metalorganic precursor.
CVD of Compound Semiconductors: Precursor Synthesis, Development and Applications by Prof. Anthony C. Jones, Prof. Paul O'Brien(auth.)