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12. The cryogenic amplifier, SHF105C, was developed by SHF communication Technology AG originally for SFQ circuits in collaboration with ISTEC. The output voltage of the SVDs was amplified to around 50 mV with the cryogenic amplifiers, which have a gain of around 30 dB at 23 K and a typical bandwidth of 30 GHz. 19 mm in diameter and length of 230 mm. Figure 18 shows the experimental results for the input data rate of 47-Gbps data; (a) the outputs of the two SVDs for patterned digital data and (b) eye pattern for PRBS of 231 -1.
17, no. 2, pp. 546–551, Jun. 2007 Y. Hashimoto, H. Suzuki, S. Nagasawa, M. Maruyama, K. Fujiwara, and M. Appl. Superconductivity, vol. 19, no. 3, pp. 1022–1025, Jun. 2009 M. Maruyama, K. Uekusa, T. Konno, N. Sato, M. Kawabata, T. Hato, H. Suzuki, and K. Appl. Superconductivity, vol. 17, no. 2, pp. 573–576, Jun. 2007 H. Ito, S. Kodama, Y. Muramoto, T. Furuta, T. Nagatsuma, and T. Ishibashi, “High-speed and High-output InP-InGaAs unitraveling-carrier photodiodes, ” IEEE J. Selected Topics in Quantum Electronics, vol.
J. Appl. , vol. 28, no. 10, pp. 1843-1846, 1989.  J. B. Williamson, K. W. Carey, F. G. Kellert, D. M. Braum, L. A. Hodge, and D. W. Loncasty, “High-density, planar Zn-diffused InGaAs/InP photodetector arrays with extended short-wavelength response”, IEEE Trans. Electron Devices, vol. 38, no. 12, p. 2707, 1991.  D. Wake, R. H. Walling, I. D. Henning, and D. G. Parker, “Planar-junction, topilluminated GaInAs/InP pin photodiode with bandwidth of 25 GHz,” Electron. , vol. 25, no. 15, pp. 967-968, 1989.
Gravitational Experiments in the Solar System